TSAL7400 vishay semiconductors 1 (5) rev. 3, 20-may-99 www.vishay.com document number 81014 gaas/gaalas ir emitting diode in 5 mm (t1 ) package description TSAL7400 is a high efficiency infrared emitting diode in gaalas on gaas technology, molded in clear plastic packages. in comparison with the standard gaas on gaas technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength. the forward voltages at low current and at high pulse current roughly correspond to the low values of the standard technology. therefore these emitters are ideally suitable as high performance replacements of standard emitters. features extra high radiant power and radiant intensity high reliability low forward voltage suitable for high pulse current operation standard t1 ( 5 mm) package angle of half intensity j = 25 peak wavelength p = 940 nm good spectral matching to si photodetectors 94 8389 applications infrared remote control units with high power requirements free air transmission systems infrared source for optical counters and card readers ir source for smoke detectors absolute maximum ratings t amb = 25 c parameter test conditions symbol value unit reverse voltage v r 5 v forward current i f 100 ma peak forward current t p /t = 0.5, t p = 100 s i fm 200 ma surge forward current t p = 100 s i fsm 1.5 a power dissipation p v 210 mw junction temperature t j 100 c operating temperature range t amb 55...+100 c storage temperature range t stg 55...+100 c soldering temperature t 5sec, 2 mm from case t sd 260 c thermal resistance junction/ambient r thja 350 k/w
TSAL7400 vishay semiconductors 2 (5) rev. 3, 20-may-99 www.vishay.com document number 81014 basic characteristics t amb = 25 c parameter test conditions symbol min typ max unit forward voltage i f = 100 ma, t p = 20 ms v f 1.35 1.6 v g i f = 1 a, t p = 100 s v f 2.6 3 v temp. coefficient of v f i f = 100ma tk vf 1.3 mv/k reverse current v r = 5 v i r 10 a junction capacitance v r = 0 v, f = 1 mhz, e = 0 c j 25 pf radiant intensity i f = 100 ma, t p = 20 ms i e 25 40 mw/sr y i f = 1.0 a, t p = 100 s i e 220 310 mw/sr radiant power i f = 100 ma, t p = 20 ms e 35 mw temp. coefficient of e i f = 20 ma tk e 0.6 %/k angle of half intensity j 25 deg peak wavelength i f = 100 ma p 940 nm spectral bandwidth i f = 100 ma 50 nm temp. coefficient of p i f = 100 ma tk p 0.2 nm/k rise time i f = 100 ma t r 800 ns fall time i f = 100 ma t f 800 ns virtual source diameter method: 63% encircled energy 2.8 mm typical characteristics (t amb = 25 c unless otherwise specified) 020406080 0 50 100 150 200 250 p power dissipation ( mw ) v t amb ambient temperature ( c ) 100 94 7957 e r thja figure 1. power dissipation vs. ambient temperature 020406080 0 50 100 150 200 250 i forward current ( ma ) f t amb ambient temperature ( c ) 100 96 11986 r thja figure 2. forward current vs. ambient temperature
TSAL7400 vishay semiconductors 3 (5) rev. 3, 20-may-99 www.vishay.com document number 81014 t p pulse duration ( ms ) 96 11987 10 0 10 1 10 1 10 1 10 1 10 0 10 2 10 2 i forward current ( a ) f t p / t = 0.01 i fsm = 1 a ( single pulse ) 0.05 0.1 0.5 1.0 figure 3. pulse forward current vs. pulse duration 012 3 v f forward voltage ( v ) 4 13600 10 1 10 0 10 2 10 3 10 4 i forward current ( ma ) f t p = 100 s t p / t = 0.001 figure 4. forward current vs. forward voltage 020406080 0.7 0.8 0.9 1.0 1.1 1.2 v relative forward voltage frel t amb ambient temperature ( c ) 100 94 7990 e i f = 10 ma figure 5. relative forward voltage vs. ambient temperature 96 12154 10 3 10 1 10 2 10 4 10 0 0.1 1 10 1000 100 i f forward current ( ma ) i radiant intensity ( mw/sr ) e figure 6. radiant intensity vs. forward current radiant power ( mw ) e i f forward current ( ma ) 13602 10 3 10 1 10 2 10 4 10 0 0.1 1 10 1000 100 figure 7. radiant power vs. forward current 10 10 50 0 100 0 0.4 0.8 1.2 1.6 i ; e rel e rel t amb ambient temperature ( c ) 140 94 7993 e i f = 20 ma figure 8. rel. radiant intensity\power vs. ambient temperature
TSAL7400 vishay semiconductors 4 (5) rev. 3, 20-may-99 www.vishay.com document number 81014 890 940 0 0.25 0.5 0.75 1.0 1.25 wavelength ( nm ) 990 14291 relative radiant power e rel i f = 100 ma figure 9. relative radiant power vs. wavelength 14330 0.4 0.2 0 0.2 0.4 0.6 0.6 0.9 0 30 10 20 40 50 60 70 80 1.0 0.8 0.7 i relative radiant intensity e rel figure 10. relative radiant intensity vs. angular displacement dimensions in mm 14341
TSAL7400 vishay semiconductors 5 (5) rev. 3, 20-may-99 www.vishay.com document number 81014 ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( odss ). the montreal protocol ( 1987 ) and its london amendments ( 1990 ) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2 . class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency ( epa ) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c ( transitional substances ) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 ( 0 ) 7131 67 2831, fax number: 49 ( 0 ) 7131 67 2423
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